Taiwan Semiconductor Corporation TSM60NB190CM2

600V, 18A, SINGLE N-CHANNEL POWE

Manufacturer: Taiwan Semiconductor Corporation
Manufacturer's number: Taiwan Semiconductor Corporation TSM60NB190CM2
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2575
SKU: TSM60NB190CM2
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Details

Parameters
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	190mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1273 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	150.6W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	TSM60
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1801-TSM60NB190CM2TR
Standard Package	2,400

N-Channel 600 V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D2PAK)