Taiwan Semiconductor Corporation TSM4NB65CI

650V, 4A, SINGLE N-CHANNEL POWER

Manufacturer: Taiwan Semiconductor Corporation
Manufacturer's number: Taiwan Semiconductor Corporation TSM4NB65CI
Package: Tube
Datasheet: PDF
Stock: 7552
SKU: TSM4NB65CI
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Details

Parameters
Mfr	Taiwan Semiconductor Corporation
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.37Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13.46 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	549 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ITO-220
Package / Case	TO-220-3 Full Pack, Isolated Tab
Base Product Number	TSM4
RoHS Status	ROHS3 Compliant
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	1801-TSM4NB65CI
Standard Package	4,000

N-Channel 650 V 4A (Tc) 25W (Tc) Through Hole ITO-220