Toshiba Semiconductor and Storage TK65G10N1,RQ

TK65G10N1,RQ

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TK65G10N1,RQ
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 5664
SKU: TK65G10N1,RQ
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Details

Parameters
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	156W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number	TK65G10
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

N-Channel 100 V 65A (Ta) 156W (Tc) Surface Mount D2PAK