Solid State Inc. 2N6660

MOSFET N-CH 60V 1.1A TO39

Manufacturer: Solid State Inc.
Manufacturer's number: Solid State Inc. 2N6660
Package: Box
Datasheet: PDF
Stock: 3
SKU: 2N6660
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Details

Parameters
Mfr	Solid State Inc.
Series	-
Package	Box
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	6.25W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-39
Package / Case	TO-205AD, TO-39-3 Metal Can
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
ECCN	EAR99
HTSUS	8541.10.0080
Other Names	2383-2N6660
Standard Package	10

N-Channel 60 V 1.1A (Tc) 6.25W (Tc) Through Hole TO-39