GeneSiC Semiconductor GA03JT12-247

GA03JT12-247

Manufacturer: GeneSiC Semiconductor
Manufacturer's number: GeneSiC Semiconductor GA03JT12-247
Package: Tube
Datasheet: PDF
Stock: 4049
SKU: GA03JT12-247
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Details

Parameters
Mfr	GeneSiC Semiconductor
Series	-
Package	Tube
Product Status	Obsolete
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	3A (Tc) (95°C)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	460mOhm @ 3A
Vgs(th) (Max) @ Id	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	15W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	30

1200 V 3A (Tc) (95°C) 15W (Tc) Through Hole TO-247AB