SMC Diode Solutions S2M0080120D

MOSFET SILICON CARBIDE SIC 1200V

Manufacturer: SMC Diode Solutions
Manufacturer's number: SMC Diode Solutions S2M0080120D
Package: Tube
Datasheet: PDF
Stock: 276
SKU: S2M0080120D
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $14.9200

Ext Price: $14.9200

Details

Parameters
Mfr	SMC Diode Solutions
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	54 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1324 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	231W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25

N-Channel 1200 V 41A (Tc) 231W (Tc) Through Hole TO-247AD