SMC Diode Solutions S2M0025120D

MOSFET SILICON CARBIDE SIC 1200V

Manufacturer: SMC Diode Solutions
Manufacturer's number: SMC Diode Solutions S2M0025120D
Package: Tube
Datasheet: PDF
Stock: 9491
SKU: S2M0025120D
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Unit Price: $44.4500

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Details

Parameters
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Affected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	25
Mfr	SMC Diode Solutions
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	63A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id	4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	4402 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	446W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)

N-Channel 1200 V 63A (Tj) 446W (Tc) Through Hole TO-247AD