Parameters |
Mfr |
Microchip Technology |
Series |
POWER MOS 7® |
Package |
Tube |
Product Status |
Active |
IGBT Type |
PT |
Voltage - Collector Emitter Breakdown (Max) |
900 V |
Current - Collector (Ic) (Max) |
72 A |
Current - Collector Pulsed (Icm) |
110 A |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 25A |
Power - Max |
417 W |
Switching Energy |
370µJ (off) |
Input Type |
Standard |
Gate Charge |
110 nC |
Td (on/off) @ 25°C |
13ns/55ns |
Test Condition |
600V, 40A, 4.3Ohm, 15V |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247 [B] |
Base Product Number |
APT25GP90 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
IGBT PT 900 V 72 A 417 W Through Hole TO-247 [B]