| Parameters |
| Mfr |
Infineon Technologies |
| Series |
HEXFET® |
| Package |
Tube |
| Product Status |
Discontinued at Digi-Key |
| Technology |
MOSFET (Metal Oxide) |
| Configuration |
2 P-Channel (Dual) |
| FET Feature |
Logic Level Gate |
| Drain to Source Voltage (Vdss) |
30V |
| Current - Continuous Drain (Id) @ 25°C |
4.9A |
| Rds On (Max) @ Id, Vgs |
58mOhm @ 4.9A, 10V |
| Vgs(th) (Max) @ Id |
1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
34nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds |
710pF @ 25V |
| Power - Max |
2W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package |
8-SO |
| Base Product Number |
IRF731 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
SP001559786 |
| Standard Package |
95 |
Mosfet Array 30V 4.9A 2W Surface Mount 8-SO