Toshiba Semiconductor and Storage TPH4R10ANL,L1Q

TPH4R10ANL,L1Q

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPH4R10ANL,L1Q
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 6315
SKU: TPH4R10ANL,L1Q
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Details

Parameters
Input Capacitance (Ciss) (Max) @ Vds	6300 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 67W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Base Product Number	TPH4R10
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	92A (Ta), 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	4.1mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Vgs (Max)	±20V

N-Channel 100 V 92A (Ta), 70A (Tc) 2.5W (Ta), 67W (Tc) Surface Mount 8-SOP Advance (5x5)