Toshiba Semiconductor and Storage TPN2R805PL,L1Q

TPN2R805PL,L1Q

Manufacturer: Toshiba Semiconductor and Storage
Manufacturer's number: Toshiba Semiconductor and Storage TPN2R805PL,L1Q
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4
SKU: TPN2R805PL,L1Q
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Details

Parameters
Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	45 V
Current - Continuous Drain (Id) @ 25°C	139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	2.8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 22.5 V
FET Feature	-
Power Dissipation (Max)	2.67W (Ta), 104W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-TSON Advance (3.1x3.1)
Package / Case	8-PowerVDFN
Base Product Number	TPN2R805
RoHS Status	RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000

N-Channel 45 V 139A (Ta), 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)