Parameters |
Mfr |
Rohm Semiconductor |
Series |
- |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
23A (Tc) |
Rds On (Max) @ Id, Vgs |
137mOhm @ 7.6A, 18V |
Vgs(th) (Max) @ Id |
5.6V @ 3.81mA |
Gate Charge (Qg) (Max) @ Vgs |
51 nC @ 18 V |
Vgs (Max) |
+22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds |
574 pF @ 800 V |
FET Feature |
- |
Power Dissipation (Max) |
125W |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-7 |
Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number |
SCT3105 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1,000 |
N-Channel 1200 V 23A (Tc) 125W Surface Mount TO-263-7