Parameters | |
---|---|
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Rds On (Max) @ Id, Vgs | 104mOhm @ 10A, 18V |
Vgs(th) (Max) @ Id | 5.6V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 18 V |
Vgs (Max) | +22V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 785 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 159W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number | SCT3080 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 846-SCT3080KW7TLTR |
Standard Package | 1,000 |
Mfr | Rohm Semiconductor |