Rohm Semiconductor SCT2450KEGC11

1200V, 10A, THD, SILICON-CARBIDE

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor SCT2450KEGC11
Package: Tube
Datasheet: PDF
Stock: 9023
SKU: SCT2450KEGC11
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Unit Price: $11.8600

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Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	585mOhm @ 3A, 18V
Vgs(th) (Max) @ Id	4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 18 V
Vgs (Max)	+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds	463 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	175°C
Mounting Type	Through Hole
Supplier Device Package	TO-247N
Package / Case	TO-247-3
Base Product Number	SCT2450
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	846-SCT2450KEGC11
Standard Package	450

N-Channel 1200 V 10A (Tc) 85W (Tc) Through Hole TO-247N