Parameters |
Mfr |
Rohm Semiconductor |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
120A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
12.3mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id |
4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
385 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
16600 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
201W (Tc) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220AB |
Package / Case |
TO-220-3 |
Base Product Number |
RX3P12 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Other Names |
846-RX3P12BATC16 |
Standard Package |
50 |
P-Channel 100 V 120A (Ta) 201W (Tc) Through Hole TO-220AB