Rohm Semiconductor RV8C010UNHZGG2CR

MOSFET N-CH 20V 1A DFN1010-3W

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor RV8C010UNHZGG2CR
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2236
SKU: RV8C010UNHZGG2CR
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Details

Parameters
Mfr	Rohm Semiconductor
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Rds On (Max) @ Id, Vgs	470mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 1mA
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010-3W
Package / Case	3-XFDFN
Base Product Number	RV8C010
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	8,000

N-Channel 20 V 1A (Ta) 1W Surface Mount DFN1010-3W