Rohm Semiconductor RQ3E180AJTB1

NCH 30V 18A MIDDLE POWER MOSFET:

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor RQ3E180AJTB1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: RQ3E180AJTB1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.8000

Ext Price: $1.8000

Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	18A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 11mA
Gate Charge (Qg) (Max) @ Vgs	39 nC @ 4.5 V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	4290 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 30W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSMT (3.2x3)
Package / Case	8-PowerVDFN
Base Product Number	RQ3E180
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	3,000

N-Channel 30 V 18A (Ta), 30A (Tc) 2W (Ta), 30W (Tc) Surface Mount 8-HSMT (3.2x3)