Rohm Semiconductor RD3S100AAFRATL

MOSFET N-CH 190V 10A TO252

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor RD3S100AAFRATL
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 1
SKU: RD3S100AAFRATL
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Details

Parameters
Mfr	Rohm Semiconductor
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	190 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	182mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	52 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	RD3S100
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 190 V 10A (Tc) 85W (Tc) Surface Mount TO-252