Rohm Semiconductor RD3G03BBGTL1

NCH 40V 65A, TO-252, POWER MOSFE

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor RD3G03BBGTL1
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: RD3G03BBGTL1
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $1.5900

Ext Price: $1.5900

Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	18.2 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1170 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 40 V 35A (Tc) 50W (Tc) Surface Mount TO-252