Rohm Semiconductor R8001CND3FRATL

MOSFET N-CH 800V 1A TO252

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor R8001CND3FRATL
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 2
SKU: R8001CND3FRATL
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Details

Parameters
Mfr	Rohm Semiconductor
Series	Automotive, AEC-Q101
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.7Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.2 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	36W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	R8001
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	2,500

N-Channel 800 V 1A (Tc) 36W (Tc) Surface Mount TO-252