Rohm Semiconductor R6535KNX3C16

650V 35A, TO-220AB, HIGH-SPEED S

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor R6535KNX3C16
Package: Tube
Datasheet: PDF
Stock: 165
SKU: R6535KNX3C16
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Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id	5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Base Product Number	R6535
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	846-R6535KNX3C16
Standard Package	50

N-Channel 650 V 35A (Tc) 370W (Tc) Through Hole TO-220AB