Rohm Semiconductor R6509ENXC7G

650V 9A TO-220FM, LOW-NOISE POWE

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor R6509ENXC7G
Package: Tube
Datasheet: PDF
Stock: 1
SKU: R6509ENXC7G
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Unit Price: $2.7900

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Details

Parameters
Other Names	846-R6509ENXC7G
Standard Package	50
Mfr	Rohm Semiconductor
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id	4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FM
Package / Case	TO-220-3 Full Pack
Base Product Number	R6509
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095

N-Channel 650 V 9A (Ta) 48W (Tc) Through Hole TO-220FM