Rohm Semiconductor BSM600D12P4G103

1200V, 567A, HALF BRIDGE, FULL S

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor BSM600D12P4G103
Package: Box
Datasheet: PDF
Stock: 8266
SKU: BSM600D12P4G103
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Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Box
Product Status	Active
Technology	Silicon Carbide (SiC)
Configuration	2 N-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	567A (Tc)
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	4.8V @ 291.2mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	59000pF @ 10V
Power - Max	1.78kW (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module
Base Product Number	BSM600
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Other Names	846-BSM600D12P4G103
Standard Package	4

Mosfet Array 1200V 567A (Tc) 1.78kW (Tc) Chassis Mount Module