| Parameters |
| Other Names |
846-BSM300D12P4G101 |
| Standard Package |
4 |
| Mfr |
Rohm Semiconductor |
| Series |
- |
| Package |
Box |
| Product Status |
Active |
| Technology |
Silicon Carbide (SiC) |
| Configuration |
2 N-Channel |
| FET Feature |
Standard |
| Drain to Source Voltage (Vdss) |
1200V |
| Current - Continuous Drain (Id) @ 25°C |
291A (Tc) |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs(th) (Max) @ Id |
4.8V @ 145.6mA |
| Gate Charge (Qg) (Max) @ Vgs |
- |
| Input Capacitance (Ciss) (Max) @ Vds |
30000pF @ 10V |
| Power - Max |
925W (Tc) |
| Operating Temperature |
175°C (TJ) |
| Mounting Type |
Chassis Mount |
| Package / Case |
Module |
| Supplier Device Package |
Module |
| Base Product Number |
BSM300 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mosfet Array 1200V 291A (Tc) 925W (Tc) Chassis Mount Module