Parameters |
Mfr |
Rohm Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
204A (Tc) |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
4V @ 35.2mA |
Gate Charge (Qg) (Max) @ Vgs |
- |
Input Capacitance (Ciss) (Max) @ Vds |
18000pF @ 10V |
Power - Max |
1360W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
Module |
Base Product Number |
BSM180 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
846-BSM180D12P2E002 |
Standard Package |
4 |
Mosfet Array 1200V (1.2kV) 204A (Tc) 1360W (Tc) Chassis Mount Module