Rohm Semiconductor BSM180C12P3C202

SICFET N-CH 1200V 180A MODULE

Manufacturer: Rohm Semiconductor
Manufacturer's number: Rohm Semiconductor BSM180C12P3C202
Package: Bulk
Datasheet: PDF
Stock: 11
SKU: BSM180C12P3C202
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Unit Price: $590.4000

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Details

Parameters
Mfr	Rohm Semiconductor
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	5.6V @ 50mA
Vgs (Max)	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds	9000 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	880W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	Module
Package / Case	Module
Base Product Number	BSM180
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	846-BSM180C12P3C202
Standard Package	12

N-Channel 1200 V 180A (Tc) 880W (Tc) Chassis Mount Module