Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
6A (Ta) |
Rds On (Max) @ Id, Vgs |
20mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
7 nC @ 4 V |
Input Capacitance (Ciss) (Max) @ Vds |
680 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
1W (Ta) |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-HUSON (2.7x2) |
Package / Case |
8-WFDFN Exposed Pad |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
N-Channel 20 V 6A (Ta) 1W (Ta) Surface Mount 8-HUSON (2.7x2)