Renesas Electronics America Inc RJK6024DPD-00#J2

N-CHANNEL POWER MOSFET

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc RJK6024DPD-00#J2
Package: Bulk
Datasheet: PDF
Stock: 3
SKU: RJK6024DPD-00#J2
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Unit Price: $1.3000

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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	42Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	4.3 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	37.5 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	27.2W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	MP-3A
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 600 V 400mA (Ta) 27.2W (Tc) Surface Mount MP-3A