Renesas Electronics America Inc RJK6014DPP-E0#T2

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc RJK6014DPP-E0#T2
Package: Bulk
Datasheet: PDF
Stock: 5
SKU: RJK6014DPP-E0#T2
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Unit Price: $5.1200

Ext Price: $5.1200

Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	35W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220FP
Package / Case	TO-220-3 Full Pack
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

N-Channel 600 V 16A (Ta) 35W (Tc) Through Hole TO-220FP