Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Technology |
MOSFET (Metal Oxide) |
Configuration |
2 N-Channel (Half Bridge) |
FET Feature |
Logic Level Gate, 4.5V Drive |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
20A, 50A |
Rds On (Max) @ Id, Vgs |
7mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id |
- |
Gate Charge (Qg) (Max) @ Vgs |
7.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds |
1660pF @ 10V |
Power - Max |
15W, 35W |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-WFDFN Exposed Pad |
Supplier Device Package |
8-WPAK |
Base Product Number |
RJK03P9 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
3,000 |
Mosfet Array 30V 20A, 50A 15W, 35W Surface Mount 8-WPAK