Renesas Electronics America Inc RJK03E1DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc RJK03E1DNS-00#J5
Package: Bulk
Datasheet: -
Stock: 80
SKU: RJK03E1DNS-00#J5
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Unit Price: $1.0900

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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Rds On (Max) @ Id, Vgs	6.9mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	2300 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	15W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HWSON (3.3x3.3)
Package / Case	8-PowerWDFN
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	276

N-Channel 30 V 25A (Ta) 15W (Tc) Surface Mount 8-HWSON (3.3x3.3)