Parameters | |
---|---|
Mfr | Renesas Electronics America Inc |
Series | - |
Package | Bulk |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Rds On (Max) @ Id, Vgs | 2.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 6380 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK |
Package / Case | SC-100, SOT-669 |
RoHS Status | Not applicable |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,500 |