Renesas Electronics America Inc RJK0222DNS-00#J5

POWER FIELD-EFFECT TRANSISTOR

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc RJK0222DNS-00#J5
Package: Bulk
Datasheet: -
Stock: 340
SKU: RJK0222DNS-00#J5
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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Active
Technology	MOSFET (Metal Oxide)
Configuration	2 N-Channel (Half Bridge)
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	14A, 16A
Rds On (Max) @ Id, Vgs	9.2mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	810pF @ 10V
Power - Max	8W, 10W
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-WDFN Exposed Pad
Supplier Device Package	8-DFN (5x6)
Base Product Number	RJK0222
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	1

Mosfet Array 25V 14A, 16A 8W, 10W Surface Mount 8-DFN (5x6)