Renesas Electronics America Inc NP80N055PDG-E1B-AY

NP80N055PDG-E1B-AY

Manufacturer: Renesas Electronics America Inc
Manufacturer's number: Renesas Electronics America Inc NP80N055PDG-E1B-AY
Package: Bulk
Datasheet: PDF
Stock: 5
SKU: NP80N055PDG-E1B-AY
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Unit Price: $1.8700

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Details

Parameters
Mfr	Renesas Electronics America Inc
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	6.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	6900 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	1.8W (Ta), 115W (Tc)
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 55 V 80A (Tc) 1.8W (Ta), 115W (Tc) Surface Mount TO-263