Parameters |
Mfr |
Renesas Electronics America Inc |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Technology |
GaAs HJ-FET |
Configuration |
N-Channel |
Frequency |
12GHz |
Gain |
13dB |
Voltage - Test |
2 V |
Current Rating (Amps) |
60mA |
Noise Figure |
0.65dB |
Current - Test |
10 mA |
Power - Output |
125mW |
Voltage - Rated |
4 V |
Package / Case |
4-SMD, Flat Leads |
Supplier Device Package |
4-Super Mini Mold |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
3,000 |
RF Mosfet 2 V 10 mA 12GHz 13dB 125mW 4-Super Mini Mold