Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4V, 10V |
Rds On (Max) @ Id, Vgs |
160mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
580 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
20W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Through Hole |
Supplier Device Package |
DPAK(L)-(2) |
Package / Case |
TO-251-3 Long Leads, IPak, TO-251AB |
RoHS Status |
RoHS non-compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2156-2SJ529L06-E |
Standard Package |
1 |
P-Channel 60 V 10A (Ta) 20W (Tc) Through Hole DPAK(L)-(2)