Rectron USA RMD1N25ES9

MOSFET N-CHANNEL 25V 1.1A SOT363

Manufacturer: Rectron USA
Manufacturer's number: Rectron USA RMD1N25ES9
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4740
SKU: RMD1N25ES9
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Details

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.1V @ 250µA
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	30 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	800mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-363-6L
Package / Case	6-TSSOP, SC-88, SOT-363
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RMD1N25ES9TR
Standard Package	30,000

N-Channel 25 V 1.1A (Ta) 800mW (Ta) Surface Mount SOT-363-6L