Rectron USA RM6N800IP

MOSFET N-CHANNEL 800V 6A TO251

Manufacturer: Rectron USA
Manufacturer's number: Rectron USA RM6N800IP
Package: Tube
Datasheet: PDF
Stock: 6265
SKU: RM6N800IP
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Details

Parameters
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM6N800IP
Standard Package	4,000
Mfr	Rectron USA
Series	-

N-Channel 800 V 6A (Tc) 98W (Tc) Through Hole TO-251