onsemi NTD60N02R-1G

NTD60N02R-1G

Manufacturer: onsemi
Manufacturer's number: onsemi NTD60N02R-1G
Package: Tube
Datasheet: PDF
Stock: 8707
SKU: NTD60N02R-1G
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Details

Parameters
Mfr	onsemi
Series	-
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 20 V
FET Feature	-
Power Dissipation (Max)	1.25W (Ta), 58W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number	NTD60
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	75

N-Channel 25 V 8.5A (Ta), 32A (Tc) 1.25W (Ta), 58W (Tc) Through Hole I-PAK