| Parameters |
| Mfr |
Qorvo |
| Series |
- |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Cascode SiCJFET) |
| Drain to Source Voltage (Vdss) |
1200 V |
| Current - Continuous Drain (Id) @ 25°C |
33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
12V |
| Rds On (Max) @ Id, Vgs |
100mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id |
6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs |
43 nC @ 12 V |
| Vgs (Max) |
±25V |
| Input Capacitance (Ciss) (Max) @ Vds |
1500 pF @ 100 V |
| FET Feature |
- |
| Power Dissipation (Max) |
254.2W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-4 |
| Package / Case |
TO-247-4 |
| Base Product Number |
UF3C120080 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Other Names |
2312-UF3C120080K4S |
| Standard Package |
30 |
N-Channel 1200 V 33A (Tc) 254.2W (Tc) Through Hole TO-247-4