| Parameters | 
                                                                                                            
                                        | Mfr | Microsemi Corporation | 
                                                                        
                                        | Series | - | 
                                                                        
                                        | Package | Bulk | 
                                                                        
                                        | Product Status | Obsolete | 
                                                                        
                                        | FET Type | N-Channel | 
                                                                        
                                        | Technology | SiCFET (Silicon Carbide) | 
                                                                        
                                        | Drain to Source Voltage (Vdss) | 700 V | 
                                                                        
                                        | Current - Continuous Drain (Id) @ 25°C | 78A (Tc) | 
                                                                        
                                        | Drive Voltage (Max Rds On, Min Rds On) | 20V | 
                                                                        
                                        | Rds On (Max) @ Id, Vgs | 45mOhm @ 60A, 20V | 
                                                                        
                                        | Vgs(th) (Max) @ Id | 2.4V @ 1mA | 
                                                                        
                                        | Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 20 V | 
                                                                        
                                        | Vgs (Max) | +25V, -10V | 
                                                                        
                                        | Input Capacitance (Ciss) (Max) @ Vds | 3950 pF @ 700 V | 
                                                                        
                                        | FET Feature | - | 
                                                                        
                                        | Power Dissipation (Max) | 273W (Tc) | 
                                                                        
                                        | Operating Temperature | -55°C ~ 175°C (TJ) | 
                                                                        
                                        | Mounting Type | Chassis Mount | 
                                                                        
                                        | Supplier Device Package | SOT-227 (ISOTOP®) | 
                                                                        
                                        | Package / Case | SOT-227-4, miniBLOC | 
                                                                        
                                        | Moisture Sensitivity Level (MSL) | 1  (Unlimited) | 
                                                                        
                                        | ECCN | EAR99 | 
                                                                        
                                        | HTSUS | 8541.29.0095 | 
                                                                        
                                        | Standard Package | 1 | 
                                                                                                        
                            
                         
                                                N-Channel 700 V 78A (Tc) 273W (Tc) Chassis Mount SOT-227 (ISOTOP®)