Parameters |
Mfr |
Microsemi Corporation |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
700 V |
Current - Continuous Drain (Id) @ 25°C |
78A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
45mOhm @ 60A, 20V |
Vgs(th) (Max) @ Id |
2.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
270 nC @ 20 V |
Vgs (Max) |
+25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
3950 pF @ 700 V |
FET Feature |
- |
Power Dissipation (Max) |
273W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Supplier Device Package |
SOT-227 (ISOTOP®) |
Package / Case |
SOT-227-4, miniBLOC |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1 |
N-Channel 700 V 78A (Tc) 273W (Tc) Chassis Mount SOT-227 (ISOTOP®)