Microsemi Corporation APT35SM70B

APT35SM70B

Manufacturer: Microsemi Corporation
Manufacturer's number: Microsemi Corporation APT35SM70B
Package: Bulk
Datasheet: PDF
Stock: 3222
SKU: APT35SM70B
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Details

Parameters
Mfr	Microsemi Corporation
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	145mOhm @ 10A, 20V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1035 pF @ 700 V
FET Feature	-
Power Dissipation (Max)	176W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 700 V 35A (Tc) 176W (Tc) Through Hole TO-247-3