| Parameters |
| Mfr |
PN Junction Semiconductor |
| Series |
P3M |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) |
1700 V |
| Current - Continuous Drain (Id) @ 25°C |
4A |
| Drive Voltage (Max Rds On, Min Rds On) |
15V |
| Rds On (Max) @ Id, Vgs |
3.6Ohm @ 600mA, 15V |
| Vgs(th) (Max) @ Id |
2.2V @ 600µA (Typ) |
| Vgs (Max) |
+19V, -8V |
| FET Feature |
- |
| Power Dissipation (Max) |
63W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-3L |
| Package / Case |
TO-247-3 |
| RoHS Status |
ROHS3 Compliant |
| REACH Status |
REACH Affected |
| Other Names |
4237-P3M173K0K3 |
| Standard Package |
1 |
N-Channel 1700 V 4A 63W Through Hole TO-247-3L