PN Junction Semiconductor P3M06120T3

SICFET N-CH 650V 29A TO-220-3

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Details

N-Channel 650 V 29A 153W Through Hole TO-220-2L

Parameters
Mfr	PN Junction Semiconductor
Series	P3M
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	29A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	158mOhm @ 10A, 15V
Vgs(th) (Max) @ Id	2.2V @ 5mA (Typ)
Vgs (Max)	+20V, -8V
FET Feature	-
Power Dissipation (Max)	153W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-2L
Package / Case	TO-220-2
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
Other Names	4237-P3M06120T3
Standard Package	1