PN Junction Semiconductor P1H06300D8

GANFET N-CH 650V 10A DFN 8X8

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Details

N-Channel 650 V 10A 55.5W Surface Mount DFN8*8

Parameters
Standard Package	1
Mfr	PN Junction Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	10A
Drive Voltage (Max Rds On, Min Rds On)	6V
Rds On (Max) @ Id, Vgs	-
Vgs (Max)	+10V, -20V
FET Feature	-
Power Dissipation (Max)	55.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN8*8
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
Other Names	4237-P1H06300D8TR