| Parameters |
| Standard Package |
1 |
| Mfr |
PN Junction Semiconductor |
| Series |
- |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
650 V |
| Current - Continuous Drain (Id) @ 25°C |
10A |
| Drive Voltage (Max Rds On, Min Rds On) |
6V |
| Rds On (Max) @ Id, Vgs |
- |
| Vgs (Max) |
+10V, -20V |
| FET Feature |
- |
| Power Dissipation (Max) |
55.5W |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
DFN8*8 |
| RoHS Status |
ROHS3 Compliant |
| REACH Status |
REACH Affected |
| Other Names |
4237-P1H06300D8TR |
N-Channel 650 V 10A 55.5W Surface Mount DFN8*8