Parameters | |
---|---|
Mfr | NXP USA Inc. |
Series | TrenchMOS™ |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 10.4A |
Rds On (Max) @ Id, Vgs | 22mOhm @ 4.2A, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11.6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 16V |
Power - Max | 4.2W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package | 8-TSSOP |
Base Product Number | PMWD20 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 2,500 |