Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
30 V |
Current - Continuous Drain (Id) @ 25°C |
16A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
9mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
1.8 nC @ 4.5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1100 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
12.5W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
8-HWSON (3.3x3.3) |
Package / Case |
8-PowerWDFN |
Other Names |
2156-RJK03E2DNS-00#J5 |
Standard Package |
1 |
N-Channel 30 V 16A (Ta) 12.5W (Tc) Surface Mount 8-HWSON (3.3x3.3)