Parameters | |
---|---|
Mfr | onsemi |
Series | - |
Package | Tray |
Product Status | Active |
Technology | Silicon Carbide (SiC) |
Configuration | 2 N-Channel (Dual) Common Source |
FET Feature | - |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 154A (Tc) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 100A, 15V |
Vgs(th) (Max) @ Id | 4.3V @ 40mA |
Gate Charge (Qg) (Max) @ Vgs | 546.4nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds | 7007pF @ 450V |
Power - Max | 328W (Tj) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | - |
Base Product Number | NXH010 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | Not Applicable |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 488-NXH010P90MNF1PTG |
Standard Package | 28 |