Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Tray |
Product Status |
Active |
Technology |
Silicon Carbide (SiC) |
Configuration |
2 N-Channel (Dual) |
FET Feature |
- |
Drain to Source Voltage (Vdss) |
1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C |
114A (Tc) |
Rds On (Max) @ Id, Vgs |
14mOhm @ 100A, 20V |
Vgs(th) (Max) @ Id |
4.3V @ 40mA |
Gate Charge (Qg) (Max) @ Vgs |
454nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds |
4707pF @ 800V |
Power - Max |
250W (Tj) |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Mounting Type |
Chassis Mount |
Package / Case |
Module |
Supplier Device Package |
- |
Base Product Number |
NXH010 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
Not Applicable |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
488-NXH010P120MNF1PTNG |
Standard Package |
28 |
Mosfet Array 1200V (1.2kV) 114A (Tc) 250W (Tj) Chassis Mount