Parameters |
Mfr |
onsemi |
Series |
Automotive, AEC-Q101 |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
1200 V |
Current - Continuous Drain (Id) @ 25°C |
58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Rds On (Max) @ Id, Vgs |
30mOhm @ 40A, 18V |
Vgs(th) (Max) @ Id |
4.4V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs |
148 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds |
3200 pF @ 800 V |
FET Feature |
- |
Power Dissipation (Max) |
234W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D2PAK-7 |
Package / Case |
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number |
NVBG022 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
488-NVBG022N120M3STR |
Standard Package |
800 |
N-Channel 1200 V 58A (Tc) 234W (Tc) Surface Mount D2PAK-7